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Data Sheet No. PD94142
IRU3007
5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRONOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDO FEATURES DESCRIPTION
Provides Single Chip Solution for Vcore, GTL+, Clock Supply & 3.3V Switcher On-Board Second switcher provides simple control for the on-board 3.3V supply 200mA On-Board LDO Regulator Designed to meet Intel VRM 8.2 and 8.3 specification for Pentium IITM On-Board DAC programs the output voltage from 1.3V to 3.5V Linear Regulator Controller On-Board for 1.5V GTL+ supply Loss-less Short Circuit Protection Synchronous Operation allows maximum efficiency Patented architecture allows fixed frequency operation as well as 100% duty cycle during dynamic load Minimum Part Count Soft-Start High current totem pole drivers for directly driving the external Power MOSFETs Power Good function monitors all outputs Over-Voltage Protection circuitry protects the switcher outputs and generates a fault output Thermal Shutdown The IRU3007 controller IC is specifically designed to meet Intel specification for Pentium IITM microprocessor applications as well as the next generation of P6 family processors. The IRU3007 provides a single chip controller IC for the Vcore, LDO controller for GTL+ and an internal 200mA regulator for clock supply which are required for the Pentium II applications. It also contains a switching controller to convert 5V to 3.3V regulator for on-board applications that uses either AT type power supply or is desired not to rely on the ATX power supply's 3.3V output. These devices feature a patented topology that in combination with a few external components, as shown in the typical application circuit, will provide in excess of 14A of output current for an on-board DC/DC converter while automatically providing the right output voltage via the 5-bit internal DAC. The IRU3007 also features, loss-less current sensing for both switchers by using the RDS(on) of the high-side power MOSFET as the sensing resistor, internal current limiting for the clock supply, a Power Good window comparator that switches its open collector output low when any one of the outputs is outside of a pre-programmed window. Other features of the device are: Under-Voltage Lockout for both 5V and 12V supplies, an external programmable softstart function, programming the oscillator frequency via an external resistor, Over-Voltage Protection (OVP) circuitry for both switcher outputs and an internal thermal shutdown.
Note: Pentium II and Pentium Pro are trademarks of Intel Corp.
APPLICATIONS
Total Power Solution for Pentium II processor application
TYPICAL APPLICATION
5V SWITCHER2 CONTROL
VOUT2
SWITCHER1 CONTROL
VOUT1
IRU3007
VOUT3
LINEAR CONTROL
LINEAR REGULATOR
VOUT4
Figure 1 - Typical application of IRU3007.
PACKAGE ORDER INFORMATION
TA (C) 0 To 70
Rev. 2.1 08/20/02
DEVICE IRU3007CW www.irf.com
PACKAGE 28-pin Plastic SOIC WB (W)
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IRU3007
ABSOLUTE MAXIMUM RATINGS
V5 Supply Voltage .................................................... V12 Supply Voltage .................................................. Storage Temperature Range ...................................... Operating Junction Temperature Range ..................... 7V 20V -65C To 150C 0C To 125C
PACKAGE INFORMATION
28-PIN WIDE BODY PLASTIC SOIC (W)
TOP VIEW
UGate2 1 Phase2 2 VID4 3 VID3 4 VID2 5 VID1 6 VID0 7 PGood 8 OCSet2 9 Fb2 10 V5 11 SS 12 Fault / Rt 13 Fb4 14
28 V12 27 UGate1 26 Phase1 25 LGate1 24 PGnd 23 OCSet1 22 VSEN1 21 Fb1 20 NC 19 Fb3 18 Gate3 17 Gnd 16 VOUT4 15 VSEN2
uJA =808C/W
ELECTRICAL SPECIFICATIONS
Unless otherwise specified, these specifications apply over V12=12V, V5=5V and TA=0 to 70C. Typical values refer to TA=25C. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the ambient temperature. PARAMETER Supply UVLO Section UVLO Threshold-12V UVLO Hysteresis-12V UVLO Threshold-5V UVLO Hysteresis-5V Supply Current Operating Supply Current SYM TEST CONDITION Supply Ramping Up Supply Ramping Up MIN TYP 10 0.4 4.3 0.3 6 30 MAX UNITS V V V V mA
V12 V5 Switching Controllers; Vcore (VOUT1) and I/O (VOUT2) VID Section (Vcore only) DAC Output Voltage (Note 1) DAC Output Line Regulation DAC Output Temp Variation VID Input LO VID Input HI VID Input Internal Pull-Up Resistor to V5 VFB2 Voltage Oscillator Section (Internal) Osc Frequency Rt=Open
0.99Vs
Vs 0.1 0.5
1.01Vs
0.8 2 27 2 200
V % % V V KV V KHz
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IRU3007
PARAMETER Error Comparator Section Input Bias Current Input Offset Voltage Delay to Output Current Limit Section CS Threshold Set Current CS Comp Offset Voltage Hiccup Duty Cycle Output Drivers Section Rise Time Fall Time Dead Band Time Between High Side and Synch Drive (Vcore Switcher Only) 2.5V Regulator (VOUT4) Reference Voltage Reference Voltage Dropout Voltage Load Regulation Line Regulation Input Bias Current Output Current Current Limit Thermal Shutdown 1.5V Regulator (VOUT3) Reference Voltage Reference Voltage Input Bias Current Output Drive Current Power Good Section Core UV Lower Trip Point Core UV Upper Trip Point Core UV Hysteresis Core OV Upper Trip Point Core OV Lower Trip Point Core OV Hysteresis I/O UV lower trip point I/O UV Upper Trip Point Fb4 Lower Trip Point Fb4 Upper Trip Point Fb3 Lower Trip Point Fb3 Upper Trip Point Power Good Output LO Power Good Output HI Fault (Over-Voltage) Section Core OV Upper Trip Point Core OV Lower Trip Point Soft-Start Section Pull-Up Resistor to 5V I/O OV Upper Trip Point I/O OV Lower Trip Point Fault Output HI
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SYM
TEST CONDITION
MIN
TYP
MAX UNITS 2 +2 100 mA mV ns mA mV % ns ns ns
-2 VDIFF=10mV 200 -5 CSS=0.1mF CL=3000pF CL=3000pF CL=3000pF 10 70 70 200
+5
VO4
TA=258C, VOUT4=Fb4 IO=200mA 1mA1.260 1.260 0.6 0.5 0.2 2
145 VO3 TA=258C, Gate3=Fb3 1.260 1.260 2 50 VSEN1 Ramping Down VSEN1 Ramping Up VSEN1 Ramping Up VSEN1 Ramping Down VSEN2 Ramping Down VSEN2 Ramping Up Fb4 Ramping Down Fb4 Ramping Up Fb3 Ramping Down Fb3 Ramping Up RL=3mA RL=5K Pull Up to 5V VSEN1 Ramping Up VSEN1 Ramping Down OCSet=0V, Phase=5V VSEN2 Ramping Up VSEN2 Ramping Down IO=3mA www.irf.com 0.90Vs 0.92Vs 0.02Vs 1.10Vs 1.08Vs 0.02Vs 2.4 2.6 0.95 1.05 0.95 1.05 0.4 4.8 1.17Vs 1.15Vs 23 4.3 4.2 10
V V V % % mA mA mA 8C V V mA mA V V V V V V V V V V V V V V V V KV V V V
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IRU3007
Note 1: Vs refers to the set point voltage given in Table 1 D4 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 D3 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 D2 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 D1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 D0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 Vs 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 D4 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 D3 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 D2 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 D1 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 D0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 Vs 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
Table 1 - Set point voltage vs. VID codes
PIN DESCRIPTIONS
PIN# 1 2 3 PIN SYMBOL UGate2 Phase2 VID4 PIN DESCRIPTION Output driver for the high-side power MOSFET for the I/O supply. This pin is connected to the Source of the power MOSFET for the I/O supply and it provides the negative sensing for the internal current sensing circuitry. This pin selects a range of output voltages for the DAC. When in the LO state the range is 1.3V to 2.05V and when it switches to HI state the range is 2.0V to 3.5V. This pin is TTL compatible that realizes a logic "1" as either HI or Open. When left open, this pin is pulled up internally by a 27KV resistor to 5V supply. MSB input to the DAC that programs the output voltage. This pin is TTL compatible that realizes a logic "1" as either HI or Open. When left open, this pin is pulled up internally by a 27KV resistor to 5V supply. Input to the DAC that programs the output voltage. This pin is TTL compatible that realizes a logic "1" as either HI or Open. When left open, this pin is pulled up internally by a 27KV resistor to 5V supply. Input to the DAC that programs the output voltage. This pin is TTL compatible that realizes a logic "1" as either HI or Open. When left open, this pin is pulled up internally by a 27KV resistor to 5V supply. LSB input to the DAC that programs the output voltage. This pin is TTL compatible that realizes a logic "1" as either HI or Open. When left open, this pin is pulled up internally by a 27KV resistor to 5V supply. This pin is an open collector output that switches LO when any of the outputs are outside of the specified under voltage trip point. It also switches low when VSEN1 pin is more than 10% above the DAC voltage setting. This pin is connected to the Drain of the power MOSFET of the I/O supply and it provides the positive sensing for the internal current sensing circuitry. An external resistor programs the CS threshold depending on the RDS of the power MOSFET. An external capacitor is placed in parallel with the programming resistor to provide high frequency noise filtering.
4
VID3
5
VID2
6
VID1
7
VID0
8
PGood
9
OCSet2
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IRU3007
PIN# 10 PIN SYMBOL Fb2 PIN DESCRIPTION This pin provides the feedback for the non-synchronous switching regulator. A resistor divider is connected from this pin to VOUT2 and ground that sets the output voltage. The value of the resistor connected from VOUT2 to Fb2 must be less than 100V. 5V supply voltage. A high frequency capacitor (0.1 to 1mF) must be placed close to this pin and connected from this pin to the ground plane for noise free operation. This pin provides the soft-start for the 2 switching regulators. An internal resistor charges an external capacitor that is connected from 5V supply to this pin which ramps up the outputs of the switching regulators, preventing the outputs from overshooting as well as limiting the input current. The second function of the Soft-Start cap is to provide long off time (HICCUP) for the synchronous MOSFET during current limiting. This pin has dual function. It acts as an output of the OVP circuitry or it can be used to program the frequency using an external resistor. When used as a fault detector, if any of the switcher outputs exceed the OVP trip point, the Fault pin switches to 12V and the soft-start cap is discharged. If the Fault pin is to be connected to any external circuitry, it needs to be buffered as shown in the application circuit. This pin provides the feedback for the internal LDO regulator that its output is VOUT4. This pin is connected to the output of the I/O switching regulator. It is an input that provides sensing for the Under/Over-voltage circuitry for the I/O supply as well as the power for the internal LDO regulator. This pin is the output of the internal LDO regulator. This pin serves as the ground pin and must be connected directly to the ground plane. This pin controls the gate of an external transistor for the 1.5V GTL+ linear regulator. This pin provides the feedback for the linear regulator that its output drive is Gate3. No connection. This pin provides the feedback for the synchronous switching regulator. Typically this pin can be connected directly to the output of the switching regulator. However, a resistor divider is recommended to be connected from this pin to VOUT1 and ground to adjust the output voltage for any drop in the output voltage that is caused by the trace resistance. The value of the resistor connected from VOUT1 to Fb1 must be less than 100V. This pin is internally connected to the undervoltage and overvoltage comparators sensing the Vcore status. It must be connected directly to the Vcore supply. This pin is connected to the Drain of the power MOSFET of the Core supply and it provides the positive sensing for the internal current sensing circuitry. An external resistor programs the CS threshold depending on the RDS of the power MOSFET. An external capacitor is placed in parallel with the programming resistor to provide high frequency noise filtering. This pin serves as the Power ground pin and must be connected directly to the ground plane close to the source of the synchronous MOSFET. A high frequency capacitor (typically 1mF) must be connected from V12 pin to this pin for noise free operation. Output driver for the synchronous power MOSFET for the Core supply. This pin is connected to the Source of the power MOSFET for the Core supply and it provides the negative sensing for the internal current sensing circuitry. Output driver for the high-side power MOSFET for the Core supply. This pin is connected to the 12V supply and serves as the power Vcc pin for the output drivers. A high frequency capacitor (typically 1mF) must be placed close to this pin and PGnd pin and be connected directly from this pin to the ground plane for noise free operation.
11 12
V5 SS
13
Fault / Rt
14 15
Fb4 VSEN2
16 17 18 19 20 21
VOUT4 Gnd Gate3 Fb3 NC Fb1
22 23
VSEN1 OCSet1
24
PGnd
25 26 27 28
LGate1 Phase1 UGate1 V12
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IRU3007
BLOCK DIAGRAM
4.3V Enable V12 Over Voltage Vset Enable 27 21
Fb1 UGate1
V12 V5
28
UVLO
11 Vset
1.17Vset
+ VID0 VID1 VID2 VID3 VID4 VSEN1 Fb3 Gate3 VSEN2
7 6 5 4 3
PWM Control
V12 25
2.5V
Slope Comp
LGate1 Phase1 OCSet1 Phase2 OCSet2
Osc
26
5Bit DAC
1.1Vset Enable
Soft Start & Fault Logic
Over Current
23 2 9
22
200uA
13
Fault / Rt
19 V12 18 1.26V V5
0.9Vset
Slope Comp
0.9V
V12 1
UGate2 PGnd Gnd Fb2 SS
+
15
PWM Control
2.0V Enable
24 17
VOUT4 Fb4 PGood
16 10 14 8 12
Figure 2 - Simplified block diagram of the IRU3007.
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TYPICAL APPLICATION
R22 12V L1 5V C2 L2 VOUT2 3.0V - 3.5V C1 C4 D1 R1 PGnd R2 VSEN2 Fb2 R3 5V C19 V5 VSEN1 Fb1 R17 C15 LGate1 C3 R10 Q1 OCSet2 UGate2 Phase2 V12 OCSet1 UGate1 Phase1 R14 C16 Q4 C13 R15 R16 R21 R13 Q3 L3 VOUT1 1.8V - 3.5V C5 R9 C8 R12 C10 C14
U1 IRU3007
PGood Fault/Rt
R19
PGood
Q2 R5 VOUT3 1.5V C17 R6
Gate3 Fb3 VID0 VID1 VID2
VOUT4 2.5V C18 R7
VOUT4
VID3 VID4
Fb4 SS R8 Gnd C9 5V
Figure 3 - Typical application of IRU3007 for an on-board DC-DC converter providing power for the Vcore, GTL+, Clock supply as well as an on-board 3.3V I/O supply for the Deschutes and the next generation processor applications.
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IRU3007
IRU3007 APPLICATION PARTS LIST
Ref Desig Description Q1 MOSFET Q2 Q3 Q4 D1 L1 L2 L3 C1 C2 C3 C4, 13 C5, 10 C8 C14 C16 C17 C18 14 R2 R5 R9 R10 R12 R19 R22 Resistor Resistor Resistor Resistor Resistor Resistor Resistor 1 4 1 1 1 1 3 1 1 75V, 1%, 0603 100V, 1%, 0603 19.1V, 1%, 0603 1.5KV, 5%, 0603 10V, 5%, 1206 3.3KV, 5%, 0603 2.2KV, 1%, 0603 220KV, 1%, 0603 10V, 5%, 0603 R3, 6, 7, 8 Resistor MOSFET MOSFET MOSFET with Schottky Diode Inductor Inductor Inductor Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Ceramic Capacitor, Ceramic Capacitor, Ceramic Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Electrolytic Qty 1 1 1 1 1 1 1 1 2 1 1 2 2 1 3 2 6 1 1 4 Part # IRL3103S, TO-263 package IRLR024, TO-252 package IRL3103S, TO-263 package IRL3103D1S, TO-263 package MBRB1035, TO-263 package L=1mH, 5052 core with 4 turns of 1.0mm wire L=4.7mH, 5052 core with 11 turns of 1.0mm wire L=2.7mH, 5052B core with 7 turns of 1.2mm wire 6MV1500GX, 1500mF, 6.3V 10MV470GX, 470mF, 10V 10MV1200GX, 1200mF, 10V 1000pF, 0603 220pF, 0603 1mF, 0805 1mF, 0603 10MV1200GX, 1200mF, 10V 6MV1500GX, 1500mF, 6.3V 6MV1000GX, 1000mF, 6.3V 6MV150GX, 150mF, 6.3V 4.7V, 5%, 1206 Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Micro Metal Micro Metal Manuf IR IR IR IR IR Micro Metal
C9, 15, 19 Capacitor, Ceramic
R1, 5, 13, Resistor
R16, 17, 21 Resistor
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IRU3007
TYPICAL APPLICATION
(Dual Layout with HIP6019)
R22 12V L1 5V C5 C2 C3 R10 Q1 L2 VOUT2 3.0V - 3.5V Phase2 C1 C4 D1 R1 PGnd VSEN2 Fb2 R2 R11 VSEN1 LGate1 Phase1 R14 Q4 C13 R15 R16 R21 C16 OCSet2 UGate2 V12 OCSet1 UGate1 R13 Q3 L3 VOUT1 1.8V - 3.5V R9 C8 R12 C10 C14
U1 IRU3007
Fb1 C12 R17 C15
V5/Comp2 R3 R4 Q2 R5 VOUT3 1.5V C17 R6 Fb3 C6 C19 C7 Gate3
NC/Comp1 C11 R18 R19
PGood Fault/Rt VID0 VID1 VID2
PGood
VOUT4 2.5V C18
VOUT4 R7 Fb4 R8 C20 Gnd
VID3 VID4 SS 5V C9
Figure 4 - Typical application of IRU3007 in a dual layout with HIP6019 for an on-board DC-DC converter providing power for the Vcore, GTL+, Clock supply as well as an on-board 3.3V I/O supply for the Deschutes and the next generation processor application. Components that need to be modified to make the dual layout work for HIP6019 and IRU3007: Part # HIP6019 IRU3007 R4 V O R11 O S S - Short R18 V O C6 V O C7 V O C9 O V C11 V O C12 V O C19 O V C20 V O
O - Open V - See IR or Harris parts list for the value Table 2 - Dual layout component table.
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IRU3007
IRU3007 APPLICATION PARTS LIST
Dual Layout with HIP6019 Ref Desig Description Q1 MOSFET Q2 Q3 Q4 D1 L1 L2 L3 C1 C2 C3 C4, 13 C5, 10 20 C8 C9,15,19 C14 C16 C17 C18 R1,13,14 15 R2 R3,6,7,8 R4, 18 R5 R9 R10 R11 R12 R19 R22 Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor Resistor 1 4 2 1 1 1 1 1 3 1 1 75V, 1%, 0603 100V, 1%, 0603 See Table 2, dual layout component 0603 3 2 19.1V, 1%, 0603 1.5KV, 5%, 0603 10V, 5%, 1206 0V, 0603 3.3KV, 5%, 0603 2.2KV, 1%, 0603 220KV, 1%, 0603 10V, 5%, 0603 Capacitor, Ceramic Capacitor, Ceramic Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Electrolytic Resistor 1 3 2 6 1 1 4 MOSFET MOSFET MOSFET with Schottky Diode Inductor Inductor Inductor Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Electrolytic Capacitor, Ceramic Capacitor, Ceramic Qty 1 1 1 1 1 1 1 1 2 1 1 2 2 5 Part # IRL3103S, TO-263 package IRLR024, TO-252 package IRL3103S, TO-263 package IRL3103D1S, TO-263 package MBRB1035, TO-263 package L=1mH, 5052 core with 4 turns of 1.0 mm wire L=4.7mH, 5052 core with 11 turns of 1.0mm wire L=2.7mH, 5052B core with 7 turns of 1.2mm wire 6MV1500GX, 1500mF, 6.3V 10MV470GX, 470mF, 10V 10MV1200GX, 1200mF, 10V 1000pF, 0603 220pF, 0603 See Table 2, dual layout component 0603 3 5 1mF, 0805 1mF, 0603 10MV1200GX, 1200mF, 10V 6MV1500GX, 1500mF, 6.3V 6MV1000GX, 1000mF, 6.3V 6MV150GX, 150mF, 6.3V 4.7V, 5%, 1206 Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Micro Metal Micro Metal Manuf IR IR IR IR IR Micro Metal
C6,7,11,12 Capacitor, Ceramic
R16,17,21 Resistor
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APPLICATION INFORMATION
An example of how to calculate the components for the application circuit is given below. Assuming, two set of output conditions that this regulator must meet for Vcore: a) Vo=2.8V , Io=14.2A, DVo=185mV, DIo=14.2A b) Vo=2V , Io=14.2A, DVo=140mV, DIo=14.2A Also, the on-board 3.3V supply must be able to provide 10A load current and maintain less than 5% total output voltage variation. The regulator design will be done such that it meets the worst case requirement of each condition. Output Capacitor Selection Vcore The first step is to select the output capacitor. This is done primarily by selecting the maximum ESR value that meets the transient voltage budget of the total DVo specification. Assuming that the regulators DC initial accuracy plus the output ripple is 2% of the output voltage, then the maximum ESR of the output capacitor is calculated as: ESR [ 100 = 7mV 14.2 light load to full load. For example, if the total resistance from the output capacitors to the Slot 1 and back to the Gnd pin of the IRU3007 is 5mV and if the total DI, the change from light load to full load is 14A, then the output voltage measured at the top of the resistor divider which is also connected to the output capacitors in this case, must be set at half of the 70mV or 35mV higher than the DAC voltage setting. This intentional voltage level shifting during the load transient eases the requirement for the output capacitor ESR at the cost of load regulation. One can show that the new ESR requirement eases up by half the total trace resistance. For example, if the ESR requirement of the output capacitors without voltage level shifting must be 7mV then after level shifting the new ESR will only need to be 8.5mV if the trace resistance is 5mV (7+5/2=9.5). However, one must be careful that the combined "voltage level shifting" and the transient response is still within the maximum tolerance of the Intel specification. To insure this, the maximum trace resistance must be less than: Rs [ 2 3 (Vspec - 0.02 3 Vo - DVo) DI
The Sanyo MVGX series is a good choice to achieve both the price and performance goals. The 6MV1500GX, 1500mF, 6.3V has an ESR of less than 36mV typical. Selecting 6 of these capacitors in parallel has an ESR of 6mV which achieves our low ESR goal. Other type of Electrolytic capacitors from other manufacturers to consider are the Panasonic FA series or the Nichicon PL series. 3.3V supply For the 3.3V supply, since there is not a fast transient requirement, 2 of the 1500mF capacitors is sufficient. Reducing the Output Capacitors Using Voltage Level Shifting Technique The trace resistance or an external resistor from the output of the switching regulator to the Slot 1 can be used to the circuit advantage and possibly reduce the number of output capacitors, by level shifting the DC regulation point when transitioning from light load to full load and vice versa. To accomplish this, the output of the regulator is typically set about half the DC drop that results from
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Where : Rs = Total maximum trace resistance allowed Vspec = Intel total voltage spec Vo = Output voltage DVo = Output ripple voltage DI = load current step For example, assuming: Vspec = 140mV = 0.1V for 2V output Vo = 2V DVo = assume 10mV = 0.01V DI = 14.2A Then the Rs is calculated to be: Rs 2 3 (0.140 - 0.02 3 2 - 0.01) = 12.6mV 14.2
However, if a resistor of this value is used, the maximum power dissipated in the trace (or if an external resistor is being used) must also be considered. For example if Rs=12.6mV, the power dissipated is: Io23Rs = 14.22312.6 = 2.54W This is a lot of power to be dissipated in a system. So, if the Rs=5mV, then the power dissipated is about 1W, which is much more acceptable. If level shifting is not implemented, then the maximum output capacitor ESR was shown previously to be 7mV which translated to 6
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IRU3007
of the 1500mF, 6MV1500GX type Sanyo capacitors. With Rs=5mV, the maximum ESR becomes 9.5mV which is equivalent to 4 caps. Another important consideration is that if a trace is being used to implement the resistor, the power dissipated by the trace increases the case temperature of the output capacitors which could seriously affect the life span of the output capacitors. Output Inductor Selection The output inductance must be selected such that under low line and the maximum output voltage condition, the inductor current slope times the output capacitor ESR is ramping up faster than the capacitor voltage is drooping during a load current step. However, if the inductor is made too small, the output ripple current and ripple voltage will become too large. One solution to bring the ripple current down is to increase the switching frequency, however that will be at the cost of reduced efficiency and higher system cost. The following set of formulas are derived to achieve optimum performance without many design iterations. The maximum output inductance is calculated using the following equation: (VIN(MIN) - Vo(MAX)) L = ESR 3 C 3 (2 3 DI) Where: VIN(MIN) = Minimum input voltage For Vo = 2.8V and DI = 14.2A, we get: L = 0.006 3 9000 3 (4.75 - 2.8) = 3.7mH (2 3 14.2) T = 1 / Fsw Vsw = Vsync = Io3RDS D (Vo + Vsync) / (VIN - Vsw + Vsync) TON = D3T TOFF = T - TON DIr = (Vo + Vsync)3TOFF / L DVo = DIr3ESR In our example for Vo = 2.8V and 14.2 A load, assuming IRL3103 MOSFET for both switches with maximum on resistance of 19m V, we have: T = 1 / 200000 = 5ms Vsw = Vsync = 14.230.019 = 0.27V D (2.8 + 0.27) / (5 - 0.27 + 0.27) = 0.61 TON = 0.6135 = 3.1ms TOFF = 5 - 3.1 = 1.9ms DIr = (2.8 + 0.27)31.9 / 3 = 1.94A DVo = 1.9430.006 = 0.011V = 11mV Power Component Selection Vcore Assuming IRL3103 MOSFETs as power components, we will calculate the maximum power dissipation as follows: For high side switch the maximum power dissipation happens at maximum Vo and maximum duty cycle. DMAX (2.8 + 0.27) / (4.75 - 0.27 + 0.27) = 0.65 PDH = DMAX3Io23RDS(MAX) PDH = 0.65314.2230.029 = 3.8W RDS(MAX)=Maximum RDS(ON) of the MOSFET at 1258C For synch MOSFET, maximum power dissipation happens at minimum Vo and minimum duty cycle. DMIN (2 + 0.27) / (5.25 - 0.27 + 0.27) = 0.43 PDS = (1 - DMIN)3Io23RDS(MAX) PDS = (1 - 0.43)314.22 30.029 = 3.33W Assuming L=3mH and Fsw=200KHz (switching frequency), the inductor ripple current and the output ripple voltage is calculated using the following set of equations: T Switching Period D Duty Cycle Vsw High-side MOSFET ON Voltage RDS MOSFET On-Resistance Vsync Synchronous MOSFET ON Voltage DIr Inductor Ripple Current DVo Output Ripple Voltage 3.3V Supply Again, for high side switch the maximum power dissipation happens at maximum Vo and maximum duty cycle. The duty cycle equation for non synchronous replaces the forward voltage of the diode with the Synch MOSFET on voltage. In equations below: Vf = 0.5V DMAX (3.3 + 0.5) / (4.75 - 0.27 + 0.5) = 0.76
Assuming that the programmed switching frequency is set at 200KHz, an inductor is designed using the Micrometals' powder iron core material. The summary of the design is outlined below: The selected core material is Powder Iron, the selected core is T50-52D from Micro Metal wound with 8 turns of #16 AWG wire, resulting in 3mH inductance with 3 mV of DC resistance.
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PDH = DMAX3Io23RDS(MAX) PDH = 0.76310 30.029 = 2.21W
2
RDS(MAX) = Maximum RDS(ON) of the MOSFET at 1258C For diode, the maximum power dissipation happens at minimum Vo and minimum duty cycle. DMIN (3.3 + 0.5) / (5.25 - 0.27 + 0.5) = 0.69 PDD = (1 - DMIN)3Io3Vf PDD = (1 - 0.69)31030.5 = 1.55W Switcher Current Limit Protection The IRU3007 uses the MOSFET RDS(ON) as the sensing resistor to sense the MOSFET current and compares to a programmed voltage which is set externally via a resistor (Rcs) placed between the drain of the MOSFET and the "CS+" terminal of the IC as shown in the application circuit. For example, if the desired current limit point is set to be 22A for the synchronous and 16A for the non synchronous, and from our previous selection, the maximum MOSFET RDS(ON)=19mW, then the current sense resistor Rcs is calculated as: Vcore Vcs = ICL3RDS = 2230.019 = 0.418V Rcs = Vcs / IB = (0.418V) / (200mA) = 2.1KV Where: IB=200mA is the internal current setting of the IRU3007 3.3V supply Vcs = ICL3RDS = 1630.019 = 0.3V Rcs = Vcs / IB = (0.3V) / (200mA) = 1.50KV 1.5V, GTL+ Supply LDO Power MOSFET Selection The first step in selecting the power MOSFET for the 1.5V linear regulator is to select its maximum RDS(ON) of the pass transistor based on the input to output Dropout voltage and the maximum load current. For Vo = 1.5V, VIN = 3.3V and IL = 2A: RDS(MAX) = (VIN - Vo) / IL = (3.3 - 1.5) / 2 = 0.9V Note: Since the MOSFETs RDS(ON) increases with temperature, this number must be divided by 1.5, in order to find the RDS(ON) max at room temperature. The Motorola MTP3055VL has a maximum of 0.18V RDS(ON) at room temperature, which meets our requirement.
To select the heat sink for the LDO MOSFET the first step is to calculate the maximum power dissipation of the device and then follow the same procedure as for the switcher. Where: PD = Power Dissipation of the Linear Regulator IL = Linear Regulator Load Current For the 1.5V and 2A load: PD = (VIN - Vo)3IL PD = (3.3 - 1.5)32 = 3.6W Assuming TJ(MAX) = 1258C: Ts = TJ - PD3(uJC + ucs) Ts = 125 - 3.63(1.8 + 0.05) = 1188C With the maximum heat sink temperature calculated in the previous step, the heat-sink-to-air thermal resistance (uSA) is calculated as follows: Assuming TA = 358C: DT = Ts - TA = 118 - 35 = 838C Temperature Rise Above Ambient uSA = DT / PD = 83 / 3.6 = 238C/W The same heat sink as the one selected for the switcher MOSFETs is also suitable for the 1.5V regulator. 2.5V Clock Supply The IRU3007 provides a complete 2.5V regulator with a minimum of 200mA current capability. The internal regulator has short circuit protection with internal thermal shutdown. 1.5V and 2.5V Supply Resistor Divider Selection Since the internal voltage reference for the linear regulators is set at 1.26V for IRU3007, there is a need to use external resistor dividers to step up the voltage. The resistor dividers are selected using the following equations: Vo = (1 + Rt / RB)3VREF Where: Rt = Top resistor divider RB = Bottom resistor divider VREF = 1.26V typical For 1.5V supply Assuming RB = 1KV: Rt = RB3[(Vo / VREF) - 1] Rt = 13[(1.5 / 1.26) - 1] = 191V
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IRU3007
For 2.5V supply Assuming RB = 1.02KV: Rt = RB3[(Vo / VREF) - 1] Rt = 1.023[(2.5 / 1.26) - 1] = 1KV Switcher Output Voltage Adjust Vcore As it was discussed earlier, the trace resistance from the output of the switching regulator to the Slot 1 can be used to the circuit advantage and possibly reduce the number of output capacitors, by level shifting the DC regulation point when transitioning from light load to full load and vice versa. To account for the DC drop, the output of the regulator is typically set about half the DC drop that results from light load to full load. For example, if the total resistance from the output capacitors to the Slot 1 and back to the Gnd pin of the IRU3007 is 5mV and if the total DI, the change from light load to full load is 14A, then the output voltage measured at the top of the resistor divider which is also connected to the output capacitors in this case, must be set at half of the 70mV or 35mV higher than the DAC voltage setting. To do this, the top resistor of the resistor divider (R12 in the application circuit) is set at 100V, and the R19 is calculated. For example, if DAC voltage setting is for 2.8V and the desired output under light load is 2.835V, then R19 is calculated using the following formula: R19 = 1003[VDAC / (Vo - 1.0043VDAC)] Select 11.8KV, 1% Note: The value of the top resistor must not exceed 100V. The bottom resistor can then be adjusted to raise the output voltage. 3.3V supply The loop gain for the non-synchronous switching regulator is intentionally set low to take advantage of the level shifting technique to reduce the number of output capacitors. Typically there is a 1% drop in the output voltage from light load (discontinuous conduction mode) to full load (continuous conduction mode) in the 3.3V supply. To account for this, the output voltage is set at 3.5V typically. The same procedure as for the synchronous is applied to the non-synch with the exception that the internal voltage reference of this regulator is internally set at 2V. The following is the set of equations to use for the output voltage setting for the non-synchronous assuming the Vo=3.5V and R2=75V (R2 is the top resistor in the application circuit). (V) The bottom resistor, R3 is calculated as follows: R3 = R23[2 / (Vo - 2)] (V) R3 = 753[2 / (3.5 - 2)] = 100V, 1% Note: The value of the top resistor, R2 must not exceed 100V. Soft-Start Capacitor Selection The soft-start capacitor must be selected such that during the start up when the output capacitors are charging up, the peak inductor current does not reach the current limit threshold. A minimum of 1mF capacitor insures this for most applications. An internal 10mA current source charges the soft-start capacitor which slowly ramps up the inverting input of the PWM comparator Vfb3. This insures the output voltage to ramp at the same rate as the soft-start cap thereby limiting the input current. For example, with 1mF and the 10mA internal current source the ramp up rate is (DV/Dt)=I/C=1V/100ms. Assuming that the output capacitance is 9000mF, the maximum start up current will be: I = 9000mF 3 (1V / 100ms) = 0.09A Input Filter It is highly recommended to place an inductor between the system 5V supply and the input capacitors of the switching regulator to isolate the 5V supply from the switching noise that occurs during the turn on and off of the switching components. Typically an inductor in the range of 1 to 3mH will be sufficient in this type of application. External Shutdown The best way to shutdown the IRU3007 is to pull down on the soft-start pin using an external small signal transistor such as 2N3904 or 2N7002 small signal MOSFET. This allows slow ramp up of the output, the same as the power up. Layout Considerations Switching regulators require careful attention to the layout of the components, specifically power components since they switch large currents. These switching components can create large amount of voltage spikes and high frequency harmonics if some of the critical components are far away from each other and are connected with inductive traces. The following is a guideline of how to place the critical components and the connections between them in order to minimize the above issues.
R19 = 1003[2.8 / (2.835 - 1.00432.800)] = 11.76KV
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IRU3007
Start the layout by first placing the power components: 1) Place the input capacitors C3 and C14 and the high side MOSFETs, Q1 and Q3 as close to their respective input caps as possible. 2) Place the synchronous MOSFET, Q2 and the Q3 as close to each other as possible with the intention that the source of Q3 and drain of the Q4 has the shortest length. Repeat this for the Q1 and D1 for the non-synchronous. 3) Place the snubber R15 and C13 between Q4 and Q3. Repeat this for R1 and C4 with respect to the Q1 and D1 for the non-synchronous. 4) Place the output inductor , L3 and the output capacitors, C16 between the MOSFET and the load with output capacitors distributed along the slot 1 and close to it. Repeat this for L2 with respect to the C1 for the non-synchronous. 5) Place the bypass capacitors, C8 and C19 right next to 12V and 5V pins. C8 next to the 12V, pin 28 and C19 next to the 5V, pin 11. 6) Place the IRU3007 such that the pwm output drives, pins 27 and 25 are relatively short distance from gates of Q3 and Q4. The non-synch MOSFET must also be situated such that the distance from its gate to the pin 1 of the IRU3007 is also relatively short. 7) Place all resistor dividers close to their respective feedback pins. 8) Place the 2.5V output capacitor, C18 close to the pin 16 of the IC and the 1.5V output capacitor, C17 close to the Q2 MOSFET. Note: It is better to place the 1.5V linear regulator components close to the IRU3007 and then run a trace from the output of the regulator to the load. However, if this is not possible then the trace from the linear drive output pin, pin 18 must be run away from any high frequency data signals. It is critical, to place high frequency ceramic capacitors close to the clock chip and termination resistors to provide local bypassing.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information Data and specifications subject to change without notice. 02/01
Rev. 2.1 08/20/02
9) Place R12 and C10 close to pin 23 and R9 and C5 close to pin 9. 10) Place C9 close to pin 12 Component connections: Note: It is extremely important that no data bus should be passing through the switching regulator section specifically close to the fast transition nodes such as PWM drives or the inductor voltage. Using the 4 layer board, dedicate one layer to ground, another layer as the power layer for the 5V, 3.3V, Vcore, 1.5V and if it is possible, for the 2.5V. Connect all grounds to the ground plane using direct vias to the ground plane. Use large low inductance/low impedance plane to connect the following connections either using component side or the solder side. a) C14 to Q3 Drain and C3 to Q1 drain b) Q3 Source to Q4 Drain and Q1 Source to D1 cathode c) Q4 drain to L3 and D1 cathode to L2 d) L3 to the output capacitors, C16 and L2 to the output capacitors, C1 e) C16 to the load, slot 1 f) Input filter L1 to the C16 and C3 g) C1 to Q2 drain h) C17 to the Q2 source I) A minimum of 0.2 inch width trace from the C18 capacitor to pin 16 Connect the rest of the components using the shortest connection possible.
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IRU3007
(W) SOIC Package 28-Pin Surface Mount, Wide Body
H
A B C
R
E
DETAIL-A PIN NO. 1
D
0.516 0.020 x 458
L
DETAIL-A K F T I
G
J
SYMBOL A B C D E F G I J K L R T
28-PIN MIN MAX 17.73 17.93 1.27 BSC 0.66 REF 0.36 0.46 7.40 7.60 2.44 2.64 0.10 0.30 0.23 0.32 10.11 10.51 08 88 0.51 1.01 0.63 0.89 2.44 2.64
NOTE: ALL MEASUREMENTS ARE IN MILLIMETERS.
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IRU3007
PACKAGE SHIPMENT METHOD
PKG DESIG W PACKAGE DESCRIPTION SOIC, Wide Body PIN COUNT 28 PARTS PER TUBE 27 PARTS PER REEL 1000 T&R Orientation Fig A
1
1
1
Feed Direction Figure A
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information Data and specifications subject to change without notice. 02/01
Rev. 2.1 08/20/02
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